Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1-xGex/Si heterostructure

被引：0
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作者：
Miron, Y.
Efrati, Fastow, M.
Cytermann, C.
Brener, R.
Eizenberg, M.
Gluck, M.
Kibbel, H.
Konig, U.
机构：
[1] Department of Materials Engineering, Technion - Israel Inst. of Technol., 32000 Haifa, Israel
[2] Solid State Institute, Technion - Israel Inst. of Technol., 32000 Haifa, Israel
[3] Daimler-Benz AG, Ulm Research Center, D-89081 Ulm, Germany
来源：
Materials Science in Semiconductor Processing | 1998年 / 1卷 / 3-4期
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页码：257 / 261
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