UNIFIED CIRCUIT MODEL FOR BIPOLAR TRANSISTORS INCLUDING QUASI-SATURATION EFFECTS.

被引:0
|
作者
Kull, George M. [1 ]
Nagel, Laurence W. [1 ]
Lee, Shiuh-Wuu [1 ]
Lloyd, Peter [1 ]
Prendergast, E.James [1 ]
Dirks, Heinz [1 ]
机构
[1] AT&T Bell Lab, Allentown, PA,, USA, AT&T Bell Lab, Allentown, PA, USA
来源
| 1600年 / ED-32期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
TRANSISTORS, BIPOLAR
引用
收藏
相关论文
共 50 条
  • [31] Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region
    Hassan, MMS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (01) : 1 - 14
  • [32] Improved Temperature-Scalable DC model for SiC power MOSFET including Quasi-Saturation effect
    Er-rafii, Hicham
    Galadi, Abdelghafour
    SOLID-STATE ELECTRONICS, 2024, 220
  • [33] Compact modeling of high-voltage LDMOS devices including quasi-saturation
    Aarts, ACT
    Kloosterman, WJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 897 - 902
  • [34] EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION.
    Bhat, K.N.
    Kumar, M.Jagadesh
    Ramasubramanian, V.
    George, Peter
    IEEE Transactions on Electron Devices, 1987, ED-34 (05) : 1163 - 1169
  • [35] Enhanced, breakdown voltage, diminished quasi-saturation, and self-heating effects in SOI thin-film bipolar transistors for improved reliability: A TCAD simulation study
    Roy, Sukhendu Deb
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (02) : 306 - 314
  • [36] BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
    Agarwal, H.
    Gupta, C.
    Goel, R.
    Kushwaha, P.
    Lin, Y. -K.
    Kao, M. -Y.
    Duarte, J. -P.
    Chang, H. -L.
    Chauhan, Y. S.
    Salahuddin, S.
    Hu, C.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (10) : 4258 - 4263
  • [37] MODELING OF NARROW-BASE BIPOLAR TRANSISTORS INCLUDING VARIABLE-BASE-CHARGE AND AVALANCHE EFFECTS.
    Hebert, Francois
    Roulston, David J.
    IEEE Transactions on Electron Devices, 1987, ED-34 (11)
  • [38] AN ANALYTICAL QUASI-SATURATION MODEL CONSIDERING HEAT-FLOW FOR A DMOS DEVICE
    LIU, CM
    KUO, JB
    WU, YP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 952 - 958
  • [39] Unified model for collector charge in heterojunction bipolar transistors
    Rudolph, M
    Doerner, R
    Beilenhoff, K
    Heymann, P
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (07) : 1747 - 1751
  • [40] A new physical, quasi 3-D, compact model of lateral bipolar transistors for circuit simulation
    Freund, D
    Kostka, A
    PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1996, : 31 - 34