QUANTUM WELL INJECTION LASERS GROWN BY MOLECULAR BEAM EPITAXY.

被引:0
|
作者
Woodbridge, K.
Blood, P.
Fletcher, E.D.
Hulyer, P.J.
机构
关键词
MOLECULAR BEAMS - Applications;
D O I
暂无
中图分类号
学科分类号
摘要
MBE is a refined form of vacuum evaporation in which molecular beams of the constituent elements produced from effusion cells impinge upon a heated substrate to produce the required epitaxial layer. The UHV system used in this work is fitted with a sample interlock for substrate transfer and extensive cryopanelling to reduce background gas species. The system has been fully automated with computer control of cell temperatures and shutter operations enabling pre-programming of complex multilayer structures.
引用
收藏
页码:50 / 51
相关论文
共 50 条
  • [41] Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy
    Manimaran, M
    Vaya, PR
    MICROELECTRONICS JOURNAL, 1999, 30 (09) : 899 - 903
  • [42] Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy
    Nanofabrication Facility, Dept. Elec. Eng., Indian Inst. T., Chennai, India
    Microelectron J, 9 (899-903):
  • [43] Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy
    Liu, PW
    Lee, MH
    Lin, HH
    Chen, JR
    ELECTRONICS LETTERS, 2002, 38 (22) : 1354 - 1355
  • [44] High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Li, W
    Peng, CS
    Jouhti, T
    Konttinen, J
    Pavelescu, EM
    Suominen, M
    Dumitrescu, M
    Pessa, M
    NOVEL IN-PLANE SEMICONDUCTOR LASERS, 2002, 4651 : 101 - 106
  • [45] Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
    Yang, X
    Jurkovic, MJ
    Heroux, JB
    Wang, WI
    ELECTRONICS LETTERS, 1999, 35 (13) : 1082 - 1083
  • [46] ON THE EXISTENCE AND ORIGIN OF ELLIPTICAL DEFECTS WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR BEAM EPITAXY.
    Mreira, Marcus Vinicius Baeta
    de Oliveira, Alfredo Gontijo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (02): : 332 - 333
  • [47] HIGHLY UNIFORM GaAs AND AlGaAs EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY.
    Saito, Junji
    Shibatomi, Akihiro
    Fujitsu Scientific and Technical Journal, 1985, 21 (02): : 190 - 197
  • [48] LOW DARK CURRENT InGaAs PIN PHOTODIODES GROWN BY MOLECULAR BEAM EPITAXY.
    Cinguino, P.
    Genova, F.
    Rigo, C.
    Stano, A.
    CSELT Technical Reports, 1985, 13 (02): : 113 - 115
  • [49] Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
    Zhang Yu
    Wang Guowei
    Tang Bao
    Xu Yingqiang
    Xu Yun
    Song Guofeng
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (10)
  • [50] Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
    张宇
    王国伟
    汤宝
    徐应强
    徐云
    宋国锋
    半导体学报, 2011, (10) : 22 - 25