Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

被引:0
|
作者
Cent Natl de la Recherche, Scientifique, Aubiere, France [1 ]
机构
来源
Thin Solid Films | / 1-2卷 / 358-361期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR BEAM EPITAXY.
    Fukunaga, Toshiaki
    Kobayashi, Keisuke L.I.
    Nakashima, Hisao
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (07): : 510 - 512
  • [42] Photocurrent and photoluminescence spectroscopy of InAsxP1-x/InP strained quantum wells grown by chemical beam epitaxy
    Monier, C
    Vilela, MF
    Serdiukova, I
    Freundlich, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 332 - 337
  • [43] Ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates by molecular beam epitaxy
    Mashita, M
    Numata, T
    Koo, BH
    Makino, H
    Yao, T
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (04): : 399 - 402
  • [44] HEAVILY DOPED BASE GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY
    ALEXANDRE, F
    BENCHIMOL, JL
    DANGLA, J
    DUBONCHEVALLIER, C
    AMARGER, V
    ELECTRONICS LETTERS, 1990, 26 (21) : 1753 - 1755
  • [45] GROWTH BY MOLECULAR-BEAM EPITAXY AND PHOTOLUMINESCENCE OF INGAAS/GAAS QUANTUM-WELLS ON GAAS (111)A SUBSTRATES
    VACCARO, PO
    TAKAHASHI, M
    FUJITA, K
    WATANABE, T
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8037 - 8041
  • [46] Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
    Liu, Po-Wei
    Tsai, G.
    Lin, H. H.
    Krier, A.
    Zhuang, Q. D.
    Stone, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (20)
  • [47] Structural and photoluminescence properties of InGaAs/GaAs multiple quantum wires grown on V-grooves by chemical beam epitaxy
    Kim, SB
    Ro, JR
    Park, KW
    Lee, EH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S383 - S386
  • [48] Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy
    Zhang, DH
    Radhakrishnan, K
    Yoon, SF
    Han, ZY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 449 - 453
  • [49] Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy
    Mozume, T
    Kasai, J
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 1050 - 1055
  • [50] Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy
    Mozume, T. (mozume@festa.or.jp), 1600, American Institute of Physics Inc. (95):