Low energy, high density plasma (ICP) for low defect etching and deposition applications on compound semiconductors

被引:0
|
作者
Etrillard, J. [1 ]
Mäher, H. [1 ]
Medjdoub, M. [1 ]
Courant, J.L. [1 ]
Nissim, Y.I. [1 ]
机构
[1] OPTO, Groupement d'Intérêt Economique, Route de Nozay, F-91460, Marcoussis, France
来源
Materials Research Society Symposium - Proceedings | 1999年 / 573卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:189 / 201
相关论文
共 50 条
  • [1] Low energy, high density plasma (ICP) for low defect etching and deposition applications on compound semiconductors
    Etrillard, J
    Maher, H
    Medjdoub, M
    Courant, JL
    Nissim, YI
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 189 - 201
  • [2] High-density plasma etching of compound semiconductors
    Shul, RJ
    McClellan, GB
    Briggs, RD
    Rieger, DJ
    Pearton, SJ
    Abernathy, CR
    Lee, JW
    Constantine, C
    Barratt, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 633 - 637
  • [3] High ion density dry etching of compound semiconductors
    Pearton, SJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 40 (2-3): : 101 - 118
  • [4] LOW TEMPERATURE AND HIGH DEPOSITION RATE EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS BY PLASMA-ASSISTED EPITAXY.
    Matsushita, Koichi
    Sato, Yasushi
    Hariu, Takashi
    Shibata, Yukio
    Shinku/Journal of the Vacuum Society of Japan, 1984, 27 (07): : 569 - 580
  • [5] Etching of low-k materials in high density fluorocarbon plasma
    Eon, D
    Raballand, V
    Cartry, G
    Peignon-Fernandez, MC
    Cardinaud, C
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 28 (03): : 331 - 337
  • [6] High-density plasma etching of low dielectric constant materials
    Standaert, TEFM
    Matsuo, PJ
    Allen, SD
    Oehrlein, GS
    Dalton, TJ
    Lu, TM
    Gutmann, R
    LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 : 265 - 275
  • [7] Low-pressure plasma sources for etching and deposition
    Cooke, MJ
    Hassall, G
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (3A): : A74 - A79
  • [8] Does high density low pressure etching depend on the type of plasma source?
    Hershkowitz, N
    Ding, J
    Breun, RA
    Chen, RTS
    Meyer, J
    Quick, AK
    PHYSICS OF PLASMAS, 1996, 3 (05) : 2197 - 2202
  • [9] Low energy selective etching of metal films in oxygen-containing high-density argon plasma
    Amirov I.I.
    Izyumov M.O.
    Naumov V.V.
    Amirov, I.I. (ildamirov@yandex.ru), 2016, Izdatel'stvo Nauka (10): : 855 - 859
  • [10] Broad beam low energy hydrogen implantation at elevated temperatures - a method for defect passivation in compound semiconductors
    Otte, K
    Lippold, G
    Schindler, A
    Bigi, F
    Schlemm, H
    Yakushev, MV
    Tomlinson, RD
    TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 773 - 776