X-ray grazing incidence diffraction analysis of GaAs/Gap interfaces

被引：0

作者：

Cui, Shufan ^{[1
]}

Wu, Lansheng ^{[1
]}

Wang, Guanming ^{[1
]}

Mai, Zhenhong ^{[1
]}

Wang, Chunyan ^{[1
]}

Wang, Yutian ^{[1
]}

Li, Mei ^{[1
]}

Ge, Zhongjiu ^{[1
]}

机构：

[1] Inst of Physics, The Chinese Acad of Sciences, Beijing, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1994年 / 15卷 / 02期

关键词：

Diffraction - Epitaxial growth - Interfaces (materials) - Thin films - X rays;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The interfaces of GaAs/GaP strained layers were investigated by means of X-ray grazing incidence diffraction (GID) combined with conventional X-ray diffraction. The structural parameters including the distortion of thin film crystal cell, the mismatch and relaxation of interface were given. The results show that GID is an effective tool for determining the interface structure of semiconductor epitaxial thin films.

引用

页码：119 / 122

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