3-V CPLD claimed as world's fastest

被引：0

作者：

机构：

来源：

Electron Des | / 23卷 / 190期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] LINEAR COMPONENTS FOR 3-V SYSTEMS
CURTIN, M
SMITH, M
ELECTRONIC PRODUCTS MAGAZINE, 1993, 35 (12): : 39 - 43
[22] EPITAXIAL GROWTH OF 3-V MATERIALS
MEHAL, EW
CRONIN, GR
ELECTROCHEMICAL TECHNOLOGY, 1966, 4 (11-1): : 540 - &
[23] ICS GOING ON A 3-V DIET
PRINCE, B
SALTERS, RHW
IEEE SPECTRUM, 1992, 29 (05) : 22 - 25
[24] LATTICE DYNAMICS OF 3-V COMPOUNDS
BANERJEE, R
VARSHNI, YP
CANADIAN JOURNAL OF PHYSICS, 1969, 47 (04) : 451 - &
[25] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[26] EFFECTIVE MASSES IN 3-V COMPOUNDS
KOLODZIEJCZAK, J
ZUKOTYNS.S
STRAMSKA, H
PHYSICA STATUS SOLIDI, 1966, 14 (02): : 471 - +
[27] MIXING 3-V AND 5-V ICS
WILLIAMS, J
IEEE SPECTRUM, 1993, 30 (03) : 40 - 42
[28] ISOLATED 3-V TO 5-V DAC
OHARA, M
ELECTRONIC DESIGN, 1995, 43 (24) : 109 - 110
[29] SCREENING AND CARRIER BUNCHING IN 3-V COMPOUNDS
QUEISSER, HJ
PHYSICS LETTERS, 1965, 18 (02): : 94 - &
[30] DIFFUSION OF ZN IN 3-V SEMICONDUCTING COMPOUNDS
SHAW, D
SHOWAN, SR
PHYSICA STATUS SOLIDI, 1969, 32 (01): : 109 - &