Stacking faults imaged by scanning tunneling microscopy

被引：0
|
作者：
Tsinghua Univ, Beijing, China [1 ]
机构：
来源：
Mater Lett | / 1-2卷 / 98-101期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
相关论文
共 50 条
  • [1] Stacking faults imaged by scanning tunneling microscopy
    Bo, XZ
    Fang, HS
    MATERIALS LETTERS, 1998, 37 (1-2) : 98 - 101
  • [2] TUNNELING TIPS IMAGED BY SCANNING TUNNELING MICROSCOPY
    MOLLER, R
    ESSLINGER, A
    RAUSCHER, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 434 - 437
  • [3] Surface states of d character imaged by scanning tunneling microscopy
    Song, Z
    Pascual, JI
    Conrad, H
    Horn, K
    Rust, HP
    SURFACE SCIENCE, 2001, 491 (1-2) : 39 - 47
  • [4] IMAGING OF STACKING-FAULTS IN HIGHLY ORIENTED PYROLYTIC-GRAPHITE USING SCANNING TUNNELING MICROSCOPY
    SNYDER, SR
    FOECKE, T
    WHITE, HS
    GERBERICH, WW
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (02) : 341 - 344
  • [5] RECONSTRUCTED AU(100) SURFACE IMAGED WITH SCANNING TUNNELING MICROSCOPY IN AIR
    SCHILLING, T
    TESCHE, B
    LEHMPFUHL, G
    ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1992, 47 (12): : 1187 - 1190
  • [6] ADSORPTION OF LIQUID-CRYSTALS IMAGED USING SCANNING TUNNELING MICROSCOPY
    MCMASTER, TJ
    CARR, H
    MILES, MJ
    CAIRNS, P
    MORRIS, VJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1990, 8 (01): : 672 - 674
  • [7] Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
    Ohno, Y.
    Taishi, T.
    Yonenaga, I.
    Takeda, S.
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 230 - 233
  • [8] Molecular Shapes, Orientation, and Packing of Polyoxometalate Arrays Imaged by Scanning Tunneling Microscopy
    Kaba, M. S.
    Song, I. K.
    Duncan, D. C.
    Hill, C. L.
    Inorganic Chemistry, 37 (03):
  • [9] Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy
    Eisele, H.
    Ivanova, L.
    Borisova, S.
    Daehne, M.
    Winkelnkemper, M.
    Ebert, Ph.
    APPLIED PHYSICS LETTERS, 2009, 94 (16)
  • [10] EXAMINATION OF STACKING AND TECHNOLOGICAL FAULTS IN SILICON BY SCANNING ELECTRON-MICROSCOPY
    LATYSHENKO, VF
    SHEIKHET, EG
    SHAKHOVTSOV, VI
    UKRAINSKII FIZICHESKII ZHURNAL, 1986, 31 (10): : 1579 - 1582
12345