Optical investigations on isovalent δ layers in III-V semiconductor compounds

被引：0
|
作者：
机构：
[1] Schwabe, R.
[2] Pietag, F.
[3] Faulkner, M.
[4] Lassen, S.
[5] Gottschalch, V.
[6] Franzheld, R.
[7] Bitz, A.
[8] Staehli, J.L.
来源：
Schwabe, R. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 77期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Numerical computation of charge carriers optical phonon scattering mobility in III-V semiconductor compounds
    Kobaidze, Revaz
    Khutsishvili, Elza
    Kekelidze, Nodar
    TRANSACTIONS OF A RAZMADZE MATHEMATICAL INSTITUTE, 2018, 172 (03) : 404 - 408
  • [32] Superlattices of III-V semiconductor and heterogeneous magnetic layers for CPP magnetotransport
    De Boeck, J
    Akinaga, H
    Bruynseraede, C
    Bender, H
    Borghs, G
    IEEE TRANSACTIONS ON MAGNETICS, 1998, 34 (04) : 891 - 893
  • [33] III-V Semiconductor Photoelectrodes
    Siddiqi, Georges
    Pan, Zhenhua
    Hu, Shu
    SEMICONDUCTORS FOR PHOTOCATALYSIS, 2017, 97 : 81 - 138
  • [34] Superlattices of III-V semiconductor and heterogeneous magnetic layers for CPP magnetotransport
    De Boeck, Jo
    Akinaga, Hiroyuki
    Bruynseraede, Christophe
    Bender, Hugo
    Borghs, Gustaaf
    IEEE Transactions on Magnetics, 1998, 34 (4 pt 1): : 891 - 893
  • [35] Variational analysis of the Rashba splitting in III-V semiconductor inversion layers
    Toloza Sandoval, M. A.
    Ferreira da Silva, A.
    de Andrada e Silva, E. A.
    La Rocca, G. C.
    PHYSICAL REVIEW B, 2011, 83 (23)
  • [36] Porous III-V compounds as nonlinear optical materials
    Tiginyanu, IM
    Kravetsky, IV
    Langa, S
    Marowsky, G
    Monecke, J
    Föll, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (02): : 549 - 555
  • [37] USE OF III-V COMPOUNDS FOR INTEGRATED OPTICAL CIRCUITS
    MERZ, JL
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 272 : 76 - 83
  • [38] THE USE OF III-V COMPOUNDS FOR INTEGRATED OPTICAL CIRCUITS
    MERZ, JL
    FIBER AND INTEGRATED OPTICS, 1982, 4 (02) : 143 - 157
  • [39] III-V semiconductor based MOEMS devices for optical telecommunications
    Garrigues, M
    Leclercq, JL
    Viktorovitch, P
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 933 - 945
  • [40] III-V semiconductor based MOEMS devices for optical Telecommunications
    Garrigues, M
    Leclercq, JL
    Viktorovitch, P
    DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS II, 2001, 4592 : 64 - 75
12345