PROPERTIES OF GALLIUM ARSENIDE DOPED BY REACTOR NEUTRON IRRADIATION.

被引：0
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作者：
Vigdorovich, V.N.
Kolin, N.G.
Osvenskii, V.B.
Kharchenko, V.A.
Kholodnyi, L.P.
Yarmolyuk, N.I.
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来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 03期
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：319 / 321
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