Blue luminescence in films containing Ge and GeO2 nanocrystals: the role of defects

被引:0
|
作者
机构
来源
Appl Phys Lett | / 3卷 / 380期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] One-step aqueous solution synthesis of Ge nanocrystals from GeO2 powders
    Wu, Jianghong
    Sun, Yangang
    Zou, Rujia
    Song, Guosheng
    Chen, Zhigang
    Wang, Chunrui
    Hu, Junqing
    CRYSTENGCOMM, 2011, 13 (11): : 3674 - 3677
  • [42] Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate
    Soares, G. V.
    Krug, C.
    Miotti, L.
    Bastos, K. P.
    Lucovsky, G.
    Baumvol, I. J. R.
    Radtke, C.
    APPLIED PHYSICS LETTERS, 2011, 98 (13)
  • [43] Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal-insulator-semiconductor characteristics
    Kita, Koji
    Suzuki, Sho
    Nomura, Hideyuki
    Takahashi, Toshitake
    Nishimura, Tomonori
    Toriumi, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2349 - 2353
  • [44] Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer
    Baldovino, Silvia
    Lamperti, Alessio
    Fanciulli, Marco
    Molle, Alessandro
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (06) : H555 - H559
  • [45] MEMORY SWITCHING IN GEO2 FILMS
    KHAN, MI
    HOGARTH, CA
    KHAN, MN
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) : 215 - 216
  • [46] Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2
    Mura, Atsushi
    Hideshima, Iori
    Liu, Zhi
    Hosoi, Takuji
    Watanabe, Heiji
    Arima, Kenta
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (01): : 165 - 171
  • [47] Characterization of GeO2 films formed on Ge substrate using high pressure oxidation
    Bae, Juhyun
    Chung, Ilsub
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (04):
  • [48] First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces
    Houssa, M.
    Pourtois, G.
    Afanas'ev, V. V.
    Stesmans, A.
    APPLIED PHYSICS LETTERS, 2011, 99 (21)
  • [49] Why GeO2 growth on Ge is suppressed and GeO2/Ge stack is much improved in high pressure O2 oxidation?
    Wang, Xu
    Toriumi, Akira
    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
  • [50] Characterization Of GeO2 Nanocrystals Prepared By Microwave Annealing
    Saikiran, V.
    Rao, N. Srinivasa
    Devaraju, G.
    Pathak, A. P.
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, 2011, 1336 : 264 - 268