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- [22] The growth and relaxation of heavily carbon-doped GaAs grown by chemical beam epitaxy ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 401 - 404
- [23] GAAS PN DIODES WITH HEAVILY CARBON-DOPED P-TYPE GAAS GROWN BY MOMBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1731 - L1734
- [25] Two-band analysis of hole mobility and hall factor for heavily carbon-doped p-type GaAs J Appl Phys, 4 (1939):
- [30] Carbon site switching in carbon-doped GaAs APPLIED PHYSICS LETTERS, 2002, 81 (08) : 1435 - 1437