Ultrafast electronic relaxation processes in porous silicon

被引：0

作者：

Matsumoto, T. ^{[1
]}

Wright, O.B. ^{[1
]}

Futagi, T. ^{[1
]}

Mimura, H. ^{[1
]}

Kanemitsu, Y. ^{[1
]}

机构：

[1] Nippon Steel Corp, Sagamihara, Japan

来源：

Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期

关键词：

All optical modulators - Carrier dynamics - Optical logic gates - Porous silicon - Ultrafast relaxation processes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：953 / 956

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