Ultrafast electronic relaxation processes in porous silicon

被引：0
|
作者：
Matsumoto, T. [1 ]
Wright, O.B. [1 ]
Futagi, T. [1 ]
Mimura, H. [1 ]
Kanemitsu, Y. [1 ]
机构：
[1] Nippon Steel Corp, Sagamihara, Japan
来源：
Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期
关键词：
All optical modulators - Carrier dynamics - Optical logic gates - Porous silicon - Ultrafast relaxation processes;
D O I：
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页码：953 / 956
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