Photoinduced hole tunneling in resonant tunneling diodes

被引：0
|
作者：
Chu, Hye Yong [1 ]
Park, Pyong Woon [1 ]
Han, Seon Gyu [1 ]
Lee, El-Hang [1 ]
机构：
[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1355 / 1357
相关论文
共 50 条
  • [41] InP-base resonant tunneling diodes
    Han Chunlin
    Chen Chen
    Zou Penghui
    Zhang Yang
    Zeng Yiping
    Xue Fangshi
    Gao Jianfeng
    Zhang Zheng
    Geng Tao
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (06)
  • [42] ELECTROLUMINESCENCE FROM BIPOLAR RESONANT TUNNELING DIODES
    VANHOOF, C
    GENOE, J
    MERTENS, R
    BORGHS, G
    GOOVAERTS, E
    APPLIED PHYSICS LETTERS, 1992, 60 (01) : 77 - 79
  • [43] Resonant-tunneling diodes with emitter prewells
    Boykin, Timothy B.
    Bowen, R. Chris
    Klimeck, Gerhard
    Lear, Kevin L.
    Applied Physics Letters, 75 (09):
  • [44] QUANTUM CAPACITANCE OF RESONANT TUNNELING DIODES - COMMENT
    LURYI, S
    APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2335 - 2336
  • [45] ANALYSIS OF BARRIER TRANSMISSION IN RESONANT TUNNELING DIODES
    ARAKI, K
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1059 - 1069
  • [46] Resonant tunneling in asymmetric triple barrier diodes
    Jo, J
    Wang, KL
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 851 - 854
  • [47] MAGNETO-QUANTUM TUNNELING PHENOMENA IN ALGAAS/GAAS RESONANT TUNNELING DIODES
    YOO, HM
    GOODNICK, SM
    STOEBE, TG
    ARTHUR, JR
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 227 - 230
  • [48] PHONON ASSISTED TUNNELING IN LATTICE-MATCHED AND PSEUDOMORPHIC RESONANT TUNNELING DIODES
    YOO, HM
    GOODNICK, SM
    ARTHUR, JR
    REED, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 370 - 373
  • [49] SIMULATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODES
    BABA, T
    MIZUTA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1322 - L1325
  • [50] Switching characteristics and analysis of resonant tunneling diodes
    School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
    Trans. Tianjin Univ., 2006, 1 (19-22):
12345