Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 8卷 / 4473期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(001) substrates
    Zaima, S
    Sakai, A
    Yasuda, Y
    APPLIED SURFACE SCIENCE, 2003, 212 : 184 - 192
  • [42] Variation of Electronic Structure with C Content in Si1-x-yGexCy/Si（001） System
    Meichun HUANG
    Liqing WU and Zizhong ZHU(Department of Physics
    Journal of Materials Science & Technology, 1999, (04) : 296 - 298
  • [43] Si/Si1-x-yGexCy/Si heterojunction bipolar transistors
    Princeton Univ, Princeton, United States
    IEEE Electron Device Lett, 7 (334-337):
  • [44] Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system
    Huang, MC
    Wu, LQ
    Zhu, ZH
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 1999, 15 (04) : 296 - 298
  • [45] Band gap of Ge rich Si1-x-yGexCy alloys
    Orner, BA
    Olowolafe, J
    Roe, K
    Kolodzey, J
    Laursen, T
    Mayer, JW
    Spear, J
    APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2557 - 2559
  • [46] Electronic properties of Si/Si1-x-yGexCy heterojunctions
    Stein, BL
    Yu, ET
    Croke, ET
    Hunter, AT
    Laursen, T
    Mayer, JW
    Ahn, CC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1639 - 1643
  • [47] Variation of electronic structure with C content in Si1-x-yGexCy/Si (001) system
    Huang, Meichun
    Wu, Liqing
    Zhu, Zizhong
    Journal of Materials Science and Technology, 1999, 15 (04): : 296 - 298
  • [48] STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM
    REGOLINI, JL
    BODNAR, S
    OBERLIN, JC
    FERRIEU, F
    GAUNEAU, M
    LAMBERT, B
    BOUCAUD, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1015 - 1019
  • [49] Si/Si1-x-yGexCy/Si heterojunction bipolar transistors
    Lanzerotti, LD
    StAmour, A
    Liu, CW
    Sturm, JC
    Watanabe, JK
    Theodore, ND
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 334 - 337
  • [50] Properties of Shottky contacts of aluminum on strained Si1-x-yGexCy layers
    Mi, J
    Gupta, A
    Yang, CY
    Zhu, JT
    Yu, PKL
    Warren, P
    Dutoit, M
    APPLIED PHYSICS LETTERS, 1996, 69 (24) : 3743 - 3745
12345