Current understanding of growth mechanisms in III-V MBE

被引：0
|
作者：
机构：
[1] Foxon, C.T.
来源：
Foxon, C.T. | 1600年 / 95期
关键词：
Molecular Beam Epitaxy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1 / 4
相关论文
共 50 条
  • [41] Reducing the defect density in MBE-ZnSe/III-V heterostructures
    Warlick, EL
    Ho, E
    Petrich, GS
    Kolodziejski, LA
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 564 - 570
  • [42] MBE GROWTH OF ALGAAS/NIAL/ALGAAS HETEROSTRUCTURES - A NOVEL EPITAXIAL III-V SEMICONDUCTOR METAL SYSTEM
    HARBISON, JP
    SANDS, T
    TABATABAIE, N
    CHAN, WK
    FLOREZ, LT
    KERAMIDAS, VG
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 425 - 426
  • [43] ECR-MBE growth of III-V nitrides with ion-removed nitrogen radical cell
    Iwata, K
    Asahi, H
    Yu, SJ
    Asami, K
    Fushida, M
    Gonda, S
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 102 - 105
  • [44] Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE
    Feng, G.
    Oe, K.
    Yoshimoto, M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (11): : 2670 - 2673
  • [45] SURFACE STUDIES ON MBE-GROWN III-V COMPOUNDS AND ALLOYS
    LUDEKE, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1241 - 1246
  • [46] MECHANISMS OF ATOMIC DIFFUSION IN THE III-V SEMICONDUCTORS
    TUCK, B
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (04) : 557 - 584
  • [47] Study and Fabrication of III-V Compound Semiconductor Transistor using MBE
    Nikte, Omkar Sandeep
    2018 3RD INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT), 2018,
  • [48] Growth mechanisms of III-V compounds by atomic hydrogen-assisted epitaxy
    LaPierre, RR
    Robinson, BJ
    Thompson, DA
    JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) : 319 - 331
  • [49] Current status of III-V nitride research
    Akasaki, I
    Amano, H
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 11 - 16
  • [50] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
    GUNN, JB
    SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
12345