Chapter 3 Magnetooptical Properties of Hg1-x Cd x Te Alloys

被引：6
|
作者：
Weiler, M.H.
机构：
来源：
Semiconductors and Semimetals | 1981年 / 16卷 / 0C期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
10.1016/S0080-8784(08)60130-1
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：119 / 191
相关论文
共 50 条
  • [41] Fragments of the coherent phase diagram and the kinetics of growth of elastically strained layers of Cd x Hg1-x Te solid solutions
    Moskvin, P. P.
    Rashkovetskii, L. V.
    Khodakovskii, V. V.
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2009, 83 (01) : 20 - 24
  • [42] Above-Hg1-x Cdx Te-bandgap photoluminescence and interfacial channels in Hg1-x Cdx Te-CdTe heterostructure
    Zhu, Liang
    Chen, Lu
    Zhu, Liangqing
    Qi, Zhen
    Chen, Xiren
    Guo, Shaoling
    He, Li
    Shao, Jun
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (02): : 377 - 383
  • [43] Dual-wavelength stimulated emission from a double-layer Cd x Hg1-x Te structure at wavelengths of 2 and 3 μm
    Nozdrin, Yu N.
    Okomel'kov, A. V.
    Varavin, V. S.
    Yakushev, M. V.
    Dvoretskii, S. A.
    JETP LETTERS, 2013, 97 (06) : 358 - 361
  • [44] Characterization of Hg1-x Cdx Te epitaxial films on various vicinal planes
    State Key Lab. for Infrared Physics, Shanghai Inst. of Technical Physics, Academia Sinica, Shanghai 200083, China
    Wuli Xuebao, 6 (1172-1173):
  • [45] Temperature dependence of the carrier lifetime in Cd x Hg1-x Te narrow-gap solid solutions with consideration for Auger processes
    Bazhenov, N. L.
    Mynbaev, K. D.
    Zegrya, G. G.
    SEMICONDUCTORS, 2015, 49 (04) : 432 - 436
  • [46] TRANSIENT CARRIER DECAY AND TRANSPORT PROPERTIES IN HG1-X CDXTE
    NIMTZ, G
    BAUER, G
    DORNHAUS, R
    MULLER, KH
    PHYSICAL REVIEW B, 1974, 10 (08) : 3302 - 3310
  • [47] Determining the Free Carrier Density in Cd x Hg1-x Te Solid Solutions from Far-Infrared Reflection Spectra
    Belov, A. G.
    Denisov, I. A.
    Kanevskii, V. E.
    Pashkova, N. V.
    Lysenko, A. P.
    SEMICONDUCTORS, 2017, 51 (13) : 1732 - 1736
  • [48] PRESSURE AND TEMPERATURE DEPENDENCES OF CDX HG1-X TE ALLOY HALL MOBILITIES
    STANKIEWICZ, J
    GIRIAT, W
    BIENENSTOCK, A
    PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (12): : 4465 - +
  • [49] Photoresistors with the gray code on the Cd x Hg1-x Te heteroepitaxial structures for a spectral interval of 2-11 μm with thermoelectric cooling
    Filatov, A. V.
    Karpov, V. V.
    Susov, E. V.
    Gribanov, A. A.
    Kuznetsov, N. S.
    Petrenko, V. I.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2016, 61 (10) : 1215 - 1219
  • [50] Influence of Cadmium Composition on CH4-H2-Based Inductively Coupled Plasma Etching of Hg1-x Cd x Te
    Boulard, F.
    Baylet, J.
    Cardinaud, C.
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (08) : 1256 - 1261
12345