Characterization of 2 inch SiC wafers made by the sublimation method

被引：0
|
作者：
Sasaki, M. [1 ]
Shiomi, H. [1 ]
Nishino, S. [1 ]
机构：
[1] Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.267
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学科分类号：
摘要：
6
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页码：267 / 270
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