Implantation of carbon in GaAs and compensating native defects

被引：0

作者：

Moll, Amy J. ^{[1
]}

Ager III, Joel W. ^{[1
]}

Kin, Man Yu ^{[1
]}

Walukiewicz, Wladek ^{[1
]}

Haller, Eugene E. ^{[1
]}

机构：

[1] Lawrence Berkeley Lab, Berkeley, United States

来源：

Materials Science Forum | 1994年 / 143-4卷 / pt 3期

关键词：

Carbon - Characterization - Crystal defects - Crystal structure - Electric properties - Ion implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the CAs acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.

引用

页码：1535 / 1540

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