Characterization of ion-implanted gallium diffusion in silicon

In order to understand the possibility of using gallium for modern silicon device fabrication in a low-thermal-budget era, we investigated the diffusion characteristics of ion-implanted gallium in silicon during 850°C annealing. We obtained the following results. (1) About 70% of 5 × 1013 cm-2 implanted gallium remains in silicon after the annealing. (2) Transient enhanced diffusion occurs during the early stage of the annealing. (3) The intrinsic diffusion characteristic obtained is consistent with that extrapolated from a higher temperature region. (4) The sheet resistance of the gallium-doped layer is roughly the same as that of the boron-doped one.