The complementary insulated-gate bipolar transistor (CIGBT)--A new power switching device

被引：0
|
作者：
Boisvert, D.M. [1 ]
Plummer, James D. [1 ]
机构：
[1] Center for Integrated Syst, Stanford, Univ, CA, USA
来源：
Electron device letters | 1990年 / 11卷 / 09期
关键词：
Transistors; Bipolar;
D O I：
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学科分类号：
摘要：
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页码：368 / 370
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