More insights from CPM and PDS: charged and neutral defects in a-Si:H

被引：0
|
作者：
Forschungszentrum Juelich, Juelich, Germany [1 ]
机构：
来源：
Sol Energ Mater Sol Cells | / 1-4卷 / 7-12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Preparation condition and recombination rates at radiative defects in a-Si:H
    Ogihara, Chisato
    Shintoku, Yuta
    Yamaguchi, Kei
    Morigaki, Kazuo
    CANADIAN JOURNAL OF PHYSICS, 2014, 92 (7-8) : 561 - 564
  • [32] Defects and stability of a-Si:H by simulations of photothermal deflection spectroscope
    Zhu, Meifang
    Luo, Guangming
    Tien Tzu Hsueh Pao/Acta Electronica Sinica, 1996, 24 (02): : 119 - 123
  • [33] Light induced defects in a-Si:H. Saturation or equilibrium?
    Wu, Z.Y.
    Siefert, J.M.
    Equer, B.
    Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 227 - 230
  • [34] Evolution of charged gap states in a-Si:H under light exposure
    Zeman, M
    Nádazdy, V
    van Swaaij, RACMM
    Durny, R
    Metselaar, JW
    AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 : 39 - 44
  • [35] Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films
    Estes, MJ
    Hirsch, LR
    Wichart, S
    Moddel, G
    Williamson, DL
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1832 - 1840
  • [36] A large discrepancy between CPM and ESR defect densities in light-soaked a-Si:H
    Shimizu, T
    Sugiyama, H
    Kumeda, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 203 - 207
  • [37] SURFACE AND BULK-DENSITY OF STATES ANALYSIS IN A-SI-H BY A NEW INTERPRETATION OF PDS AND CPM MEASUREMENTS
    AMATO, G
    BENEDETTO, G
    BOARINO, L
    SPAGNOLO, R
    SOLID STATE COMMUNICATIONS, 1991, 77 (03) : 177 - 180
  • [38] Characterization of the visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films
    Estes, MJ
    Hirsch, LR
    Wichart, S
    Moddel, G
    AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 : 831 - 836
  • [39] Relation between photocreated and thermally-quenched defects in a-Si:H
    Shimizu, T
    Nishino, T
    Mitani, M
    Kumeda, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 292 - 295
  • [40] Saturation and recovery kinetics of current-induced defects in a-Si:H
    Street, R.A.
    Hack, M.
    Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 263 - 266
12345