Optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

被引：0
|
作者：
Fan, J.C.
Wang, J.C.
Chen, Y.F.
机构：
来源：
Applied Physics Letters | 1999年 / 74卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Interfacial roughening in lattice-matched GaInP/GaAs heterostructures
    Wang, YQ
    Wang, ZL
    Brown, T
    Brown, A
    May, G
    THIN SOLID FILMS, 2001, 397 (1-2) : 162 - 169
  • [22] Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures
    Giannini, Nathan
    Yang, Zhou
    Albrecht, Alexander R.
    Sheik-Bahae, Mansoor
    OPTICAL AND ELECTRONIC COOLING OF SOLIDS II, 2017, 10121
  • [23] MOMBE GROWTH OF HIGH-QUALITY GAAS/GAINP HETEROSTRUCTURES
    MAUREL, P
    BOVE, P
    GARCIA, JC
    HIRTZ, JP
    RAZEGHI, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1076 - 1076
  • [24] STUDIES OF LATTICE-MISMATCH AND ELECTRICAL CHARACTERISTICS IN GAINAS/GAAS AND GAASP/GAAS HETEROSTRUCTURES
    WIE, CR
    CHOI, YW
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 56 - 56
  • [25] Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors
    Delseny, C
    Mourier, Y
    Pascal, F
    Jarrix, S
    Lecoy, G
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2735 - 2739
  • [26] Improving the Efficiency of GaInP/GaAs Light Emitters Using Surface Passivation
    Tripathi, Tripurari S.
    Radevici, Ivan
    Dagyte, Vilgaile
    Sadi, Toufik
    Oksanen, Jani
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3667 - 3672
  • [27] The electrical and optical studies of NTD GaAs crystals
    Strzelecka, S
    Hruban, A
    Gladysz, M
    JurkiewiczWegner, E
    Orlowski, W
    Surma, B
    Piersa, M
    Gladki, A
    Mirowska, A
    SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION, 1997, 3178 : 242 - 245
  • [28] Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Si
    Wang, G
    Zhao, GY
    Soga, T
    Jimbo, T
    Umeno, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11A): : L1280 - L1282
  • [29] LOCALIZED DEPOSITION OF GAAS/GAINP HETEROSTRUCTURES USING LP-MOVPE
    MAASSEN, M
    KAYSER, O
    WESTPHALEN, R
    GUIMARAES, FEG
    GEURTS, J
    FINDERS, J
    BALK, P
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (03) : 257 - 264
  • [30] Differential-integral photodetectors based on GaInP-GaAs heterostructures
    Abdukadyrov, M. A.
    Abdurakhmanov, Y. Y.
    Akhmedova, N. A.
    Pattakhov, A. A.
    Zhurnal Tekhnicheskoi Fiziki, 41 (08):
12345