Γ-X intervalley tunnelling in a GaAs/alAs resonant tunnelling diode under uniaxial stress

被引：0
|
作者：
Wolak, E. [1 ]
Park, B.G. [1 ]
Higgins, R.J. [1 ]
Martin, K.P. [1 ]
Carnahan, R.E. [1 ]
Lear, K.L. [1 ]
Harris, J.S. [1 ]
机构：
[1] Georgia Inst of Technology, Atlanta, United States
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Differential conductance - Intervalley tunneling - Resonant tunneling diodes - Uniaxial stress effects;
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页码：500 / 503
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