In-situ characterization of Si surface oxidation by high-sensitivity infrared reflection spectroscopic method

被引：0
|
作者：
Nishida, Masahiro [1 ]
Matsui, Yuichi [1 ]
Okuyama, Masanori [1 ]
Hamakawa, Yoshihiro [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
Semiconducting silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：286 / 289
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