Physical origin of InAs quantum dots on GaAs(001)

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 7卷 / 783期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots
    Costantini, G.
    Rastelli, A.
    Manzano, C.
    Acosta-Diaz, P.
    Songmuang, R.
    Katsaros, G.
    Schmidt, O. G.
    Kern, K.
    PHYSICAL REVIEW LETTERS, 2006, 96 (22)
  • [22] MBE-growth of InAs/GaAs(001) quantum dots at low temperatures
    Zolotaryov, A.
    Heyn, Ch.
    Hansen, W.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (18) : 4122 - 4125
  • [23] Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage
    Kissel, H
    Müller, U
    Walther, C
    Masselink, WT
    Mazur, YI
    Tarasov, GG
    Lisitsa, MP
    PHYSICAL REVIEW B, 2000, 62 (11) : 7213 - 7218
  • [24] Rough InAs/GaAs quantum dots
    Bezerra, M. G.
    Farlas, G. A.
    Freire, J. A. K.
    Ferreira, R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 899 - +
  • [25] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [26] Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs
    Lim, Ju Young
    Song, Jin Dong
    Yang, Hae Suk
    THIN SOLID FILMS, 2012, 520 (21) : 6589 - 6594
  • [27] Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)
    Zhang, K
    Falta, J
    Schmidt, T
    Heyn, C
    Materlik, G
    Hansen, W
    PURE AND APPLIED CHEMISTRY, 2000, 72 (1-2) : 199 - 207
  • [28] Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
    Evtikhiev, VP
    Tokranov, VE
    Kryzhanovskii, AK
    Boiko, AM
    Suris, RA
    Titkov, AN
    Nakamura, A
    Ichida, M
    SEMICONDUCTORS, 1998, 32 (07) : 765 - 769
  • [29] Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
    V. P. Evtikhiev
    V. E. Tokranov
    A. K. Kryzhanovskii
    A. M. Boiko
    R. A. Suris
    A. N. Titkov
    A. Nakamura
    M. Ichida
    Semiconductors, 1998, 32 : 765 - 769
  • [30] Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy
    Steimetz, E
    Zettler, JT
    Richter, W
    Westwood, DI
    Woolf, DA
    Sobiesierski, Z
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 3058 - 3064
12345