Saturation of generation-recombination current for very small recombination times

被引:0
|
作者
Pelaz, Lourdes
Orantes, J.L.
Enriquez, L.
Bailon, L.
Barbolla, J.
机构
来源
Journal of Applied Physics | 1994年 / 76卷 / 11期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] EVIDENCE OF OPTICAL GENERATION-RECOMBINATION NOISE
    JANG, SL
    CHANG, KY
    HSU, JK
    SOLID-STATE ELECTRONICS, 1995, 38 (08) : 1449 - 1453
  • [22] THEORY OF THE GENERATION-RECOMBINATION NOISE IN SEMICONDUCTORS
    IKHSANOV, RN
    URITSKII, ZI
    SOVIET PHYSICS-SOLID STATE, 1963, 5 (01): : 247 - 249
  • [23] GENERATION-RECOMBINATION NOISE IN HETEROGENEOUS SEMICONDUCTORS
    MATYUSHKIN, VP
    TSYUTSYURA, DI
    SHENDEROVSKY, VA
    UKRAINSKII FIZICHESKII ZHURNAL, 1984, 29 (08): : 1203 - 1208
  • [24] GENERATION-RECOMBINATION KINETICS IN CDTE - CL
    LOSEE, DL
    RANADIVE, DK
    SMITH, FTJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 325 - 325
  • [25] Size effects on generation-recombination noise
    Gomila, G
    Reggiani, L
    APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4380 - 4382
  • [26] GENERATION-RECOMBINATION NOISE IN WEAK ELECTROLYTES
    FLEISCHMANN, M
    OLDFIELD, JW
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1970, 27 (02) : 207 - +
  • [27] Generation-recombination noise in bipolar transistors
    Dai, YS
    MICROELECTRONICS RELIABILITY, 2001, 41 (06) : 919 - 925
  • [28] Generation-recombination centers in CdTe:V
    Kosyachenko, LA
    Paranchich, SY
    Tanasyuk, YV
    Sklyarchuk, VM
    Sklyarchuk, EF
    Maslyanchuk, EL
    Motushchuk, VV
    SEMICONDUCTORS, 2003, 37 (04) : 452 - 455
  • [29] INGAAS/INP-PHOTODIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION
    BUCHALI, F
    BEHRENDT, R
    HEYMANN, G
    ELECTRONICS LETTERS, 1991, 27 (03) : 235 - 237
  • [30] Activationless generation-recombination current in semimetallic heterostructures: application to InAs/GaSb
    Lau, W
    Singh, MR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (19) : 4257 - 4266