Defects in molecular beam epitaxial GaAs grown at low temperatures

被引:0
|
作者
机构
来源
| 1600年 / 23期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [31] On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs
    Morvic, M
    Betko, J
    Novak, J
    Kordos, P
    Forster, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 205 (01): : 125 - 128
  • [32] Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs
    Betko, J
    Morvic, M
    Novak, J
    Forster, A
    Kordos, P
    APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2563 - 2565
  • [33] ON COMPENSATION AND CONDUCTIVITY MODELS FOR MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURE
    LOOK, DC
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 3148 - 3151
  • [35] Investigations of surface defects of GaAs grown by molecular beam epitaxy
    Kaniewska, M
    Klima, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 512 - 515
  • [36] Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates
    Izhnin, I. I.
    Izhnin, A. I.
    Savytskyy, H. V.
    Fitsych, O. I.
    Mikhailov, N. N.
    Varavin, V. S.
    Dvoretsky, S. A.
    Sidorov, Yu. G.
    Mynbaev, K. D.
    OPTO-ELECTRONICS REVIEW, 2012, 20 (04) : 375 - 378
  • [37] Structural defects and photoluminescence of epitaxial Si films grown at low temperatures
    Petter, K
    Sieber, I
    Rau, B
    Brehme, S
    Lips, K
    Fuhs, W
    THIN SOLID FILMS, 2005, 487 (1-2) : 137 - 141
  • [38] INFLUENCE OF MISMATCH ON THE DEFECTS IN RELAXED EPITAXIAL INGAAS/GAAS(100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    WESTWOOD, DI
    WOOLF, DA
    VILA, A
    CORNET, A
    MORANTE, JR
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1731 - 1735
  • [39] HALL AND DRIFT MOBILITIES IN MOLECULAR-BEAM EPITAXIAL GROWN GAAS
    CHIN, VWL
    OSOTCHAN, T
    VAUGHAN, MR
    TANSLEY, TL
    GRIFFITHS, GJ
    KACHWALLA, Z
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (11) : 1317 - 1321
  • [40] Interaction of dopants with a host GaAs lattice: The case of low-temperature grown molecular beam epitaxial GaAs(Si)
    OHagan, SP
    Missous, M
    Mottram, A
    Wright, AC
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8384 - 8390