ANNEALING EFFECTS OF Al/N-TYPE 6H SiC RECTIFYING CONTACTS.

被引：0
|
作者：
Yasuda, Kazuhito [1 ]
Hayakawa, Toshitaka [1 ]
Saji, Manabu [1 ]
机构：
[1] Showa-ku, Nagoya Inst of Technol,, Dep of Electr & Comput Eng,, Nagoya,, Showa-ku, Nagoya Inst of Technol, Dep of Electr & Comput Eng, Nagoya,
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
21
引用
收藏
页码：2002 / 2008
相关论文
共 50 条
  • [1] Rectifying contacts to n-type 6H and 4H-SiC
    Luckowski, ED
    IsaacsSmith, T
    Williams, JR
    SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1-3: 1ST CONFERENCE ON FUTURE SCIENCE & EARTH SCIENCE MISSIONS; 1ST CONFERENCE ON SYNERGISTIC POWER & PROPULSION SYSTEMS TECHNOLOGY; 1ST CONFERENCE ON APPLICATIONS OF THERMOPHYSICS IN MICROGRAVITY; 2ND CONFERENCE ON COMMERCIAL DEVELOPMENT OF SPACE; - 2ND CONFERENCE ON NEXT GENERATION LAUNCH SYSTEMS; 14TH SYMPOSIUM ON SPACE NUCLEAR POWER AND PROPULSION, 1997, (387): : 851 - 856
  • [2] ANNEALING EFFECTS OF A1/N-TYPE-6H SIC RECTIFYING CONTACTS
    YASUDA, K
    HAYAKAWA, T
    SAJI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) : 2002 - 2008
  • [3] ANNEALING OF RADIATION DEFECTS IN N-TYPE SIC(6H) IRRADIATED WITH NEUTRONS
    VEINGER, AI
    LEPNEVA, AA
    LOMAKINA, GA
    MOKHOV, EN
    SOKOLOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1256 - 1259
  • [4] Comparison of Ni/Ti and Ni ohmic contacts on n-type 6H–SiC
    Bohumil Barda
    Petr Macháč
    Marie Hubičková
    Josef Náhlík
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 1039 - 1044
  • [5] Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC
    周天宇
    刘学超
    黄维
    卓世异
    郑燕青
    施尔畏
    Chinese Physics B, 2015, 24 (12) : 471 - 475
  • [6] AMORPHIZATION AND ANNEALING OF 6H SIC IMPLANTED WITH N-TYPE, P-TYPE OR ISOVALENT DOPANTS
    SPITZNAGEL, JA
    WOOD, S
    CHOYKE, WJ
    DEVATY, RP
    RUAN, J
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 113 - 118
  • [7] INFLUENCE OF ANNEALING ON THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE SIC(6H)
    BALLANDOVICH, VS
    VIOLINA, GN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 959 - 960
  • [8] Columnar pore growth in n-type 6H SiC
    Ke, Y.
    Yan, F.
    Devaty, R. P.
    Choyke, W. J.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 739 - +
  • [9] Ohmic contacts to n-type 6H-SiC without post-annealing
    Teraji, T
    Hara, S
    Okushi, H
    Kajimura, K
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 149 - 154
  • [10] Rectifying electrical contacts to n-type 6H-SiC formed from energetically deposited carbon
    Kracica, M.
    Mayes, E. L. H.
    Tran, H. N.
    Holland, A. S.
    McCulloch, D. G.
    Partridge, J. G.
    CARBON, 2016, 102 : 141 - 144
12345