New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistors

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作者：
Natori, Kenji [1 ]
Wada, Naoya [1 ]
Kurusu, Takashi [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 9 A期
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页码：6463 / 6470
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