New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistors

被引：0
|
作者：
Natori, Kenji [1 ]
Wada, Naoya [1 ]
Kurusu, Takashi [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 9 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：6463 / 6470
相关论文
共 50 条
  • [1] New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistors
    Natori, K
    Wada, N
    Kurusu, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6463 - 6470
  • [2] Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors
    Lee, Yeonghun
    Kakushima, Kuniyuki
    Natori, Kenji
    Iwai, Hiroshi
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (15)
  • [3] Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors
    1600, American Institute of Physics Inc. (118):
  • [4] Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
    Gnani, Elena
    Gnudi, Antonio
    Reggiani, Susanna
    Baccarani, Giorgio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 2918 - 2930
  • [5] Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
    Baccarani, Giorgio
    Gnani, Elena
    Gnudi, Antonio
    Reggiani, Susanna
    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, : 5 - +
  • [6] Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors
    Rodrigues, Isabel Harrysson
    Rorsman, Niklas
    Vorobiev, Andrei
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (24)
  • [7] Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor
    Hu, Guangxi
    Hu, Shuyan
    Liu, Ran
    Wang, Lingli
    Zhou, Xing
    Tang, Ting-Ao
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (07) : 2410 - 2414
  • [8] Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors:: Experimental and Monte Carlo analysis
    Lusakowski, J.
    Martinez, M. J. Martin
    Rengel, R.
    Gonzalez, T.
    Tauk, R.
    Meziani, Y. M.
    Knap, W.
    Boeuf, F.
    Skotnicki, T.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [9] Schrodinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors
    Liu, Keng-Ming
    Chen, Wanqiang
    Register, Leonard F.
    Banerjee, Sanjay K.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
  • [10] Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
    Liang, Gengchiau
    Neophytou, Neophytos
    Lundstrom, Mark S.
    Nikonov, Dmitri E.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
12345