Broad band emission behaviors in ZnS thin film electroluminescent devices

被引：0

作者：

Nakano, Ryotaro ^{[1
]}

Matsumoto, Hironaga ^{[1
]}

Endo, Tadao ^{[1
]}

Shimada, Jun ^{[1
]}

Sakagami, Norio ^{[1
]}

Miura, Noboru ^{[1
]}

机构：

[1] Meiji Univ, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期

关键词：

Electroluminescence;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Time-resolved emission spectra and transient emission behavior at various wavelength regions were measured for doubly insulated thin-film electroluminescent devices having electron-beam-evaporated undoped ZnS or ZnS:TbFx as the active layer under an alternating pulse voltage of 500 ns width. The broad-band emission intrinsic to the ZnS host was observed in the wavelength region from 320 nm to 700 nm, and this emission showed a maximum at 250 ns and then decreased quickly regardless of the wavelength. The emission of Tb3+ ion appeared with the decay of the broad-band emission and was saturated within an applied pulse width.

引用

页码：2103 / 2104

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