Uniaxial-stress investigation of the phonon-assisted recombination mechanisms associated with the X states in type-II GaAs/AlAs superlattices

被引：0
|
作者：
Tribe, W. R.
Klipstein, P. C.
Smith, G. W.
Grey, R.
机构：
来源：
Physical Review B: Condensed Matter | / 54卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 32 条
  • [21] DETERMINATION OF GAMMA-X TRANSFER RATES IN TYPE-II (AL)GAAS/ALAS SUPERLATTICES
    FELDMANN, J
    SATTMANN, R
    PETER, G
    GOBEL, EO
    NUNNENKAMP, J
    KUHL, J
    HEBLING, J
    PLOOG, K
    CINGOLANI, R
    MURALIDHARAN, R
    DAWSON, P
    FOXON, CT
    SURFACE SCIENCE, 1990, 229 (1-3) : 452 - 455
  • [22] GAMMA-X MIXING IN TYPE-II GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    VOLIOTIS, V
    GROUSSON, R
    LAVALLARD, P
    IVCHENKO, EL
    KISELEV, AA
    PLANEL, R
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 237 - 240
  • [23] Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure
    Ono, K
    Uchida, K
    Miura, N
    Hirayama, Y
    Ohdaira, K
    Shiraki, Y
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 698 - 702
  • [24] NATURE OF THE LOWEST ELECTRON-STATES IN SHORT-PERIOD GAAS-ALAS SUPERLATTICES OF TYPE-II
    SCALBERT, D
    CERNOGORA, J
    LAGUILLAUME, CBA
    MAAREF, M
    CHARFI, FF
    PLANEL, R
    SOLID STATE COMMUNICATIONS, 1989, 70 (10) : 945 - 949
  • [25] Temperature dependence of Gamma to X-z electron transfer times in type-II GaAs/AlAs superlattices
    dePaula, AM
    Weber, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 198 - 200
  • [26] Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices
    Oxford Univ, Oxford, United Kingdom
    Superlattices Microstruct, 5 (1027-1032):
  • [27] Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices
    Gilmour, T
    Klipstein, PC
    Tribe, WR
    Smith, GW
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (05) : 1027 - 1032
  • [28] Carrier transport in GaAs/AlAs type-II superlattices under electric field:: Switch from X-X to Γ-Γ transfer
    Hosoda, M
    Ohtani, N
    Kuroyanagi, K
    Domoto, C
    APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1866 - 1868
  • [29] Binding energies of ground and excited donor states bound to X valleys in GaAs/AlAs type-II quantum wells
    Carneiro, GN
    Weber, G
    PHYSICAL REVIEW B, 1998, 58 (12): : 7829 - 7833
  • [30] CW PHOTOLUMINESCENCE DETERMINATION OF THERMALLY ACTIVATED FAST X-]GAMMA INTERLAYER ELECTRON-SCATTERING IN TYPE-II GAAS/ALAS SUPERLATTICES
    FU, LP
    BACALZO, FT
    GILLILAND, GD
    CHEN, R
    BAJAJ, KK
    KLEM, J
    PHYSICAL REVIEW B, 1995, 51 (24): : 17630 - 17634
1234