HIGH QUALITY SEMI-INSULATING GaAs DOPED WITH CHROMIUM AND OXYGEN.

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作者：
Fujita, Keiichiro
Nishida, Yasuhiro
Kito, Nobuhiro
Kohe, Kiyohiko
Akai, Shin-ichi
Suzuki, Takashi
Matsumura, Akira
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Sumitomo Electric Technical Review | 1980年 / 19期
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摘要：
The manufacturing method of Cr-O mixed typed semi-insulating GaAs crystals and its characteristics, especially thermal stability, are described with the 4-level model. Presented are the doping conditions to obtain thermally stable semi-insulating GaAs crystals by thermal treatment for 2 hours at 800 degree C in H//2 gas.
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页码：97 / 102
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