共 50 条
- [32] Effect of hydrogen addition to fluorocarbon gases (CF4, C4F8) in selective SiO2/Si etching by electron cyclotron resonance plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 1088 - 1091
- [34] Strongly oriented Co3O4 thin films on MgO(100) and MgAl2O4(100) substrates by PE-CVD CRYSTENGCOMM, 2011, 13 (11): : 3670 - 3673
- [35] PLASMA COMPOSITION AND SiO2 ETCHING KINETICS IN CF4/C4F8/Ar/He MIXTURE: EFFECTS OF CF4/C4F8 MIXING RATIO AND BIAS POWER IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 2022, 65 (10): : 47 - 53
- [36] Warming potential reduction of C4F8 using inductively coupled plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01): : 280 - 285
- [38] Behavior of fluorocarbon species near temperature controlled and radio frequency biased metal plate in C4F8 plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (04): : 1420 - 1425
- [39] Warming potential reduction of C4F8 using inductively coupled plasma Shindo, H. (hshindo@keyaki.cc.u-tokai.ac.jp), 1600, Japan Society of Applied Physics (42):