Hydrostatic pressure dependence of the photoluminescence of Si nanocrystals in SiO2

被引：0
|
作者：
Harvard Univ, Cambridge, United States [1 ]
机构：
来源：
Appl Phys Lett | / 1卷 / 87-89期
关键词：
Annealing - Calculations - Hydrostatic pressure - Ion implantation - Mathematical models - Nanostructured materials - Pressure effects - Pressure measurement - Silica - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper reports the dependence on hydrostatic pressure of the photoluminescence energy of Si nanocrystals in a SiO2 matrix. The quantum confinement model is also tested by comparing the experimental results with theoretical estimates. The samples are fabricated by implanting Si+ ions into thermally oxidized Si wafers, followed by thermal annealing. The results for two samples are presented.
引用
收藏
相关论文
共 50 条
  • [31] Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO2
    Sias, US
    Moreira, EC
    Ribeiro, E
    Boudinov, H
    Amaral, L
    Behar, M
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 5053 - 5059
  • [32] Theory for photoluminescence from SiO2 films containing Si nanocrystals and Er ions
    Qin, G
    Qin, GG
    Wang, SH
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6738 - 6745
  • [33] Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2
    Zhou, X. D.
    Ren, F.
    Xiao, X. H.
    Cai, G. X.
    Jiang, C. Z.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (20): : 3437 - 3442
  • [34] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
  • [35] Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix
    Wang, YQ
    Kong, GL
    Chen, WD
    Diao, HW
    Chen, CY
    Zhang, SB
    Liao, XB
    APPLIED PHYSICS LETTERS, 2002, 81 (22) : 4174 - 4176
  • [36] Dose dependence of room temperature photoluminescence from Si implanted SiO2
    Cheylan, S
    Manson, NB
    Elliman, RG
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 213 - 216
  • [37] Photoluminescence study of erbium doped SiO2 thin films containing Si nanocrystals
    Kao, CC
    Barthou, C
    Gallas, B
    Fisson, S
    Vuye, G
    Rivory, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3): : 226 - 229
  • [38] The influence of the implantation temperature on the photoluminescence characteristics of Si nanocrystals embedded into SiO2 matrix
    Sias, US
    Moreira, EC
    Ribeiro, E
    Boudinov, H
    Amaral, L
    Behar, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 218 : 405 - 409
  • [39] Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2
    Chang, GS
    Son, JH
    Chae, KH
    Whang, CN
    Kurmaev, EZ
    Shamin, SN
    Galakhov, VR
    Moewes, A
    Ederer, DL
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (03): : 303 - 306
  • [40] Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2
    Chang, G.S.
    Son, J.H.
    Chae, K.H.
    Whang, C.N.
    Kurmaev, E.Z.
    Shamin, S.N.
    Galakhov, V.R.
    Moewes, A.
    Ederer, D.L.
    Applied Physics A: Materials Science and Processing, 2001, 72 (03): : 303 - 306
12345