DEPTH DISTRIBUTIONS OF Au RECOIL ATOMS IN SILICON.

被引:0
|
作者
Paprocki, K. [1 ]
Brylowska, I. [1 ]
Syszko, W. [1 ]
机构
[1] UMCS, Lublin, Pol, UMCS, Lublin, Pol
来源
Applied physics. A, Solids and surfaces | 1988年 / A45卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:109 / 112
相关论文
共 50 条
  • [31] The alloys of aluminium and silicon.
    不详
    NATURE, 1926, 118 : 498 - 499
  • [32] AUGER RECOMBINATION IN SILICON.
    Abakumov, V.N.
    Yassievich, I.N.
    1977, 11 (07): : 766 - 771
  • [33] Metallurgical Grade Silicon.
    Renno Gomes, Mario
    Metalurgia ABM, 1983, 39 (312): : 617 - 621
  • [34] On precipitated amorphous silicon.
    Braesco, P
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1919, 168 : 343 - 345
  • [35] METALLURGY OF OXYGEN IN SILICON.
    Mikkelsen Jr., J.C.
    Journal of Metals, 1985, 37 (05): : 51 - 54
  • [36] RANGE OF 2- TO 60-KEV RECOIL ATOMS IN CU, AG, AND AU
    VANLINT, VA
    SCHMITT, RA
    SUFFREDINI, CS
    PHYSICAL REVIEW, 1961, 121 (05): : 1457 - &
  • [37] Adsorption of silicon atoms on the surface of the Au/W(110)
    Pudikov, D. A.
    Zhizhin, E. V.
    Vishniakova, A. A.
    Vilkov, O. Yu.
    Vladimirov, G. G.
    PHYSICS OF THE SOLID STATE, 2017, 59 (12) : 2476 - 2480
  • [38] Adsorption of silicon atoms on the surface of the Au/W(110)
    D. A. Pudikov
    E. V. Zhizhin
    A. A. Vishniakova
    O. Yu. Vilkov
    G. G. Vladimirov
    Physics of the Solid State, 2017, 59 : 2476 - 2480
  • [39] Note on the Spectrum of Silicon.
    Exner, F
    Haschek, E
    ASTROPHYSICAL JOURNAL, 1900, 12 (01): : 48 - 49
  • [40] Electrical conductivity of silicon.
    Seemann, HJ
    PHYSIKALISCHE ZEITSCHRIFT, 1927, 28 : 765 - 766