USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND Co-60 RADIATION-INDUCED DEFECTS IN MOS TRANSISTORS.

被引：0
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作者：
Dozier, C.M. [1 ]
Brown, D.B. [1 ]
Freitag, R.K. [1 ]
Throckmorton, J.L. [1 ]
机构：
[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
来源：
IEEE Transactions on Nuclear Science | 1986年 / NS-33卷 / 06期
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22
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