首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
Photoluminescence study for nanometer Ge particles embedded Si oxide films
被引:0
|
作者
:
Ma, Shu-Yi
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Ma, Shu-Yi
Zhang, Buo-Rui
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Zhang, Buo-Rui
Qin, Guo-Gang
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Qin, Guo-Gang
Han, He-Xiang
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Han, He-Xiang
Wang, Zhao-Ping
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Wang, Zhao-Ping
Li, Guo-Hua
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Li, Guo-Hua
Ma, Zhen-Chang
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Ma, Zhen-Chang
Zong, Wan-Hua
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Peking University, Beijing 100871, China
Zong, Wan-Hua
机构
:
[1]
Department of Physics, Peking University, Beijing 100871, China
[2]
State Key Lab. Superlattices M., Institute of Semiconductors, Academia Sinica, Beijing 100083, China
[3]
13th Inst. Min. of Electron. Indust., Shijiazhuang 050051, China
来源
:
Wuli Xuebao/Acta Physica Sinica
|
1998年
/ 47卷
/ 03期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
页码:506 / 507
相关论文
共 50 条
[41]
VISIBLE PHOTOLUMINESCENCE IN SI+-IMPLANTED THERMAL OXIDE-FILMS ON CRYSTALLINE SI
SHIMIZUIWAYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
SHIMIZUIWAYAMA, T
NAKAO, S
论文数:
0
引用数:
0
h-index:
0
机构:
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
NAKAO, S
SAITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
NATL IND RES INST NAGOYA, KITA KU, NAGOYA 462, JAPAN
SAITOH, K
APPLIED PHYSICS LETTERS,
1994,
65
(14)
: 1814
-
1816
[42]
Luminescence Properties of Nanometer Si with Embedded Structure
LI Yu-guo
论文数:
0
引用数:
0
h-index:
0
LI Yu-guo
Semiconductor Photonics and Technology,
2008,
(01)
: 61
-
64
[43]
Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films
de Azevedo, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
de Azevedo, WM
da Silva, EF
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
da Silva, EF
de Vasconcelos, EA
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
de Vasconcelos, EA
Boudinov, H
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
Boudinov, H
MICROELECTRONICS JOURNAL,
2005,
36
(11)
: 992
-
994
[44]
Luminescent Properties of Nanometer Si with Embedded Structure
LI Zhong~1
论文数:
0
引用数:
0
h-index:
0
LI Zhong~1
2. Shandong Special Education School
论文数:
0
引用数:
0
h-index:
0
2. Shandong Special Education School
SemiconductorPhotonicsandTechnology,
2004,
(01)
: 38
-
40
[45]
The photoluminescence property of annealed C(film)/Si(SiO2)(nanometer particles)/C(film)
Qiu, XY
论文数:
0
引用数:
0
h-index:
0
机构:
SW China Normal Univ, Dept Phys, Chongqing 400715, Peoples R China
SW China Normal Univ, Dept Phys, Chongqing 400715, Peoples R China
Qiu, XY
Li, J
论文数:
0
引用数:
0
h-index:
0
机构:
SW China Normal Univ, Dept Phys, Chongqing 400715, Peoples R China
SW China Normal Univ, Dept Phys, Chongqing 400715, Peoples R China
Li, J
CHINESE JOURNAL OF CHEMICAL PHYSICS,
2002,
15
(04)
: 317
-
320
[46]
ON THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE IN NANOMETER-SIZE GE CRYSTALLITES
KANEMITSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
KANEMITSU, Y
UTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
UTO, H
MASUMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
MASUMOTO, Y
MAEDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
MAEDA, Y
APPLIED PHYSICS LETTERS,
1992,
61
(18)
: 2187
-
2189
[47]
Photoluminescence study of micro-patterned Si/Ge/Si single quantum wells
Choi, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Choi, SH
Kim, HY
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Kim, HY
Hong, YK
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Hong, YK
Koo, JY
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Koo, JY
Seok, JH
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Seok, JH
Kim, JY
论文数:
0
引用数:
0
h-index:
0
机构:
Kyung Hee Univ, Coll Elect & Informat, Suwon 449701, South Korea
Kim, JY
JOURNAL OF THE KOREAN PHYSICAL SOCIETY,
2003,
42
: S120
-
S123
[48]
Photoluminescence and electroluminescence study of Si-Si0.7Ge0.3 quantum dots
Univ of Glasgow, Glasgow, United Kingdom
论文数:
0
引用数:
0
h-index:
0
Univ of Glasgow, Glasgow, United Kingdom
Applied Surface Science,
1996,
102
: 372
-
376
[49]
Photoluminescence and electroluminescence study of Si-Si0.7Ge0.3 quantum dots
Tang, YS
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
Tang, YS
Ni, WX
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
Ni, WX
Torres, CMS
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
Torres, CMS
Hansson, GV
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
Hansson, GV
APPLIED SURFACE SCIENCE,
1996,
102
: 372
-
376
[50]
Intense photoluminescence from Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
Novikov, A. V.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Novikov, A. V.
Shaleev, M. V.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Shaleev, M. V.
Yablonskiy, A. N.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Yablonskiy, A. N.
Kuznetsov, O. A.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Kuznetsov, O. A.
Drozdov, Yu N.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Drozdov, Yu N.
Lobanov, D. N.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Lobanov, D. N.
Krasilnik, Z. F.
论文数:
0
引用数:
0
h-index:
0
机构:
RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
Krasilnik, Z. F.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
2007,
22
(01)
: S29
-
S32
←
1
2
3
4
5
→