High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

被引：0

作者：

Nottenburg, Richard N. ^{[1
]}

Chen, Young-Kai ^{[1
]}

Panish, Morton B. ^{[1
]}

Hamm, R. ^{[1
]}

Humphrey, D.A. ^{[1
]}

机构：

[1] AT&T, Murray Hill, NJ, USA

来源：

Electron device letters | 1988年 / 9卷 / 10期

关键词：

CRYSTALS -- Epitaxial Growth - MOLECULAR BEAM EPITAXY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3 × 3 and 0.8 × 3 μm2, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-angstrom) InGaAs base enhance the DC performance of these transistors.

引用

页码：524 / 526

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