Manufacture and Electrical Properties of p-n Si-CdSe Heterojunctions.

被引：0
|
作者：
Ruzyllo, Jerzy
Jakubowski, Andrzej
Chrzanowska, Malgorzata
Krupa, Andrzej
机构：
来源：
| 1600年 / 24期
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A method of preparation and some results of electric and photoelectric studies of p-n Si-CdSe heterojunctions are discussed.
引用
收藏
相关论文
共 50 条
  • [21] Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions
    Solovan, M. M.
    Brus, V. V.
    Maryanchuk, P. D.
    SEMICONDUCTORS, 2013, 47 (09) : 1174 - 1179
  • [22] ELECTRICAL AND OPTICAL PROPERTIES OF SPUTTERED N-P ZNO-SI HETEROJUNCTIONS
    WASA, K
    HADA, T
    HAYAKAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) : 1732 - &
  • [23] Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions
    M. M. Solovan
    V. V. Brus
    P. D. Maryanchuk
    Semiconductors, 2013, 47 : 1174 - 1179
  • [24] Electrical properties and transport mechanisms of p-znte/n-si heterojunctions
    Seyam, M. A. M.
    El-Shair, H. T.
    Salem, G. F.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 41 (03): : 221 - 227
  • [25] Electrical and photovoltaic properties of p-n heterojunctions obtained using sol gel derived nanostructured ZnO:La films onto p-Si
    Buyuk, Gonca Ilgu
    Ilican, Saliha
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 145
  • [26] RADIATIVE RECOMBINATION IN P-N HETEROJUNCTIONS
    GOLDENBLUM, A
    REVUE ROUMAINE DE PHYSIQUE, 1969, 14 (05): : 481 - +
  • [27] SPECTRAL RESPONSE OF P-N HETEROJUNCTIONS
    TANSLEY, TL
    PHYSICA STATUS SOLIDI, 1967, 23 (01): : 241 - +
  • [28] Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
    Tiagulskyi, Stanislav
    Yatskiv, Roman
    Faitova, Hana
    Kucerova, Sarka
    Vanis, Jan
    Grym, Jan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 107 (107)
  • [29] Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions
    吴素贞
    邓赞红
    董伟伟
    邵景珍
    方晓东
    Journal of Semiconductors, 2014, 35 (04) : 36 - 40
  • [30] Fabrication and electrical properties of p-CuAlO2/(n-, p-) Si heterojunctions
    Wu Suzhen
    Deng Zanhong
    Dong Weiwei
    Shao Jingzhen
    Fang Xiaodong
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
12345