Ultrafast photoconductors from low-temperature MOCVD-grown GaAs and InGaAs epitaxial layers

被引：0
|
作者：
Krotkus, A. [1 ]
Pasiskevicius, V. [1 ]
Lideikis, T. [1 ]
Treideris, G. [1 ]
Lescinskas, D. [1 ]
Jasutis, V. [1 ]
机构：
[1] Semiconductor Physics Inst, Vilnius, Lithuania
来源：
Applied Physics A: Solids and Surfaces | 1994年 / 58卷 / 02期
关键词：
Indium gallium arsenide - Low temperature metalorganic chemical vapor deposition;
D O I：
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学科分类号：
摘要：
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页码：177 / 181
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