MECHANISM OF SELF-DIFFUSION IN GERMANIUM AND SILICON.

被引：0

作者：

Rudoi, N.E.

Panteleev, V.A.

Okulich, V.I.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 7卷 / 12期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Self diffusion phenomena in Ge and Si are considered assuming that a semiconductor contains defects whose concentration is N and whose energy of formation is W and that the self diffusion coefficient is proportional to the concentration of the defect under consideration.

引用

页码：1558 / 1559

共 50 条

[21] SELF-DIFFUSION ENTROPY IN SILICON
LANNOO, M
BOURGOIN, JC
SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 913 - 917
[22] Self-Diffusion in Amorphous Silicon
Strauss, Florian
Doerrer, Lars
Geue, Thomas
Stahn, Jochen
Koutsioubas, Alexandros
Mattauch, Stefan
Schmidt, Harald
PHYSICAL REVIEW LETTERS, 2016, 116 (02)
[23] DISSOCIATIVE DIFFUSION OF NICKEL IN SILICON AND SELF-DIFFUSION OF SILICON
YOSHIDA, M
SAITO, K
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1968, 16 (1-2): : 92 - &
[24] SILICON SELF-DIFFUSION IN QUARTZ
JAOUL, O
BEJINA, F
ELIE, F
ABEL, F
PHYSICAL REVIEW LETTERS, 1995, 74 (11) : 2038 - 2041
[25] EFFECT OF HEAVY DOPING ON THE SELF-DIFFUSION OF GERMANIUM
VALENTA, MW
RAMASASTRY, C
PHYSICAL REVIEW, 1957, 106 (01): : 73 - 75
[26] MECHANISM FOR SELF-DIFFUSION IN GRAPHITE
DIENES, GJ
PHYSICAL REVIEW, 1952, 86 (04): : 651 - 651
[27] GOLD, SELF-DIFFUSION, AND DOPANT DIFFUSION IN SILICON
MATHIOT, D
PHYSICAL REVIEW B, 1992, 45 (23): : 13345 - 13355
[28] MECHANISM OF SELF-DIFFUSION IN DIAMOND
BERNHOLC, J
ANTONELLI, A
DELSOLE, TM
BARYAM, Y
PANTELIDES, ST
PHYSICAL REVIEW LETTERS, 1988, 61 (23) : 2689 - 2692
[29] MECHANISM FOR SELF-DIFFUSION IN ICE
ONSAGER, L
RUNNELS, LK
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1963, 50 (02) : 208 - +
[30] Self-diffusion and impurity diffusion in silicon dioxide
Uematsu M.
Journal of Phase Equilibria and Diffusion, 2005, 26 (5) : 547 - 554

← 1 2 3 4 5 →