MECHANISM OF SELF-DIFFUSION IN GERMANIUM AND SILICON.

被引：0

作者：

Rudoi, N.E.

Panteleev, V.A.

Okulich, V.I.

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来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 7卷 / 12期

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摘要：

Self diffusion phenomena in Ge and Si are considered assuming that a semiconductor contains defects whose concentration is N and whose energy of formation is W and that the self diffusion coefficient is proportional to the concentration of the defect under consideration.

引用

页码：1558 / 1559

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