HIGH VOLTAGE, HIGH CURRENT, NON-DESTRUCTIVE FBSOA TESTING. PART I.

The non-destruct testing of Forward Bias Safe Operating Area (FBSOA) is considered. Since conventional methods of measuring the Second Breakdown (S. B. ) limits of the FBSOA curve invariably results in device failure, the generation of a complete family of curves through destructive testing is costly and time consuming. Generally, the transistor under test (TUT) is measured for S. B. capability in a common base configuration, allowing for easily adjustable and repeatable collector current, collector-emitter voltage and pulse width measurements. Non-destructive FBSOA testers are discussed and the methods and test circuitry used in Motorola test fixtures are described.