Chemical reactions in plasma-assisted chemical vapor deposition of titanium

被引：0

|

作者：

NEC Corp, Ibaraki, Japan ^{[1
]}

机构：

来源：

J Electrochem Soc | / 7卷 / 2558-2562期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[41] Deposition of diamond/β-SiC gradient composite films by microwave plasma-assisted chemical vapor deposition
Yulong Shi
Minhui Tan
X. Jiang
Journal of Materials Research, 2002, 17 : 1241 - 1243
[42] Deposition of diamond/β-SiC gradient composite films by microwave plasma-assisted chemical vapor deposition
Shi, YL
Tan, MH
Jiang, X
JOURNAL OF MATERIALS RESEARCH, 2002, 17 (06) : 1241 - 1243
[43] A THEORY OF PLASMA-ASSISTED CHEMICAL VAPOR TRANSPORT PROCESSES
ZAROWIN, CB
JOURNAL OF APPLIED PHYSICS, 1985, 57 (03) : 929 - 942
[44] Effect of silicon addition on microstructure and mechanical property of titanium nitride film prepared by plasma-assisted chemical vapor deposition
Park, BH
Kim, YI
Kim, KH
THIN SOLID FILMS, 1999, 348 (1-2) : 210 - 214
[45] Effect of silicon addition on microstructure and mechanical property of titanium nitride film prepared by plasma-assisted chemical vapor deposition
Park, Bum Hee
Kim, Yong-Il
Kim, Kwang Ho
Thin Solid Films, 1999, 348 (01): : 210 - 214
[46] Well-aligned graphitic nanofibers synthesized by plasma-assisted chemical vapor deposition
Chen, Y
Wang, ZL
Yin, JS
Johnson, DJ
Prince, RH
CHEMICAL PHYSICS LETTERS, 1997, 272 (3-4) : 178 - 182
[47] Identification of influence factors in a thermal model of a plasma-assisted chemical vapor deposition process
Rouquette, Sebastien
Autrique, Laurent
Chaussavoine, Charles
Thomas, Laurent
INVERSE PROBLEMS IN SCIENCE AND ENGINEERING, 2007, 15 (05) : 489 - 515
[48] Highly aligned ZnS nanorods grown by plasma-assisted metalorganic chemical vapor deposition
Feng, QJ
Shen, DZ
Zhang, JY
Liang, HW
Zhao, DX
Lu, YM
Fan, XW
JOURNAL OF CRYSTAL GROWTH, 2005, 285 (04) : 561 - 565
[49] Tailoring carbon nanotips in the plasma-assisted chemical vapor deposition: Effect of the process parameters
Wang, B. B.
Ostrikov, K.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)
[50] Carrier density of epitaxial InN grown by plasma-assisted metalorganic chemical vapor deposition
NTT Basic Research Lab, Kanagawa, Japan
Jpn J Appl Phys Part 2 Letter, 6 A (L658-L660):

← 1 2 3 4 5 →