USE OF LIGHT FIGURES IN STUDIES OF ETCHING AND EPITAXIAL GROWTH.

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作者：
Owen, S.J.T.
Watt, A.H.
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Microelectronics Journal | 1974年 / 5卷 / 03期
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摘要：
The occurrence of etch pits during cleaning and polishing of semiconductors and the appearance of structure in epitaxially grown materials is considered. A brief discussion on etch pits and formation of structures in epitaxial material is presented, as in an introduction to the light figure technique. Results are given of a light figure investigation of epitaxially grown gallium arsenide and of epitaxial layers of zinc selenide on germanium.
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页码：37 / 44
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