Nanoimprint mold repair by Ga+ focused-ion-beam direct etching

被引：0
|
作者：
Watanabe, Keiichiro [1 ,2 ]
Kanda, Kazuhiro [1 ,2 ]
Haruyama, Yuichi [1 ,2 ]
Kaito, Takashi [3 ]
Matsui, Shinji [1 ,2 ]
机构：
[1] University of Hyogo, Graduate School of Science, LASTI, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
[2] CREST JST, 5-3 Yonban-cho, Chiyoda-ku, Tokyo 102-8666, Japan
[3] SII Nanotechnology Inc., 36-1 Takenoshita, Oyama, Shizuoka 410-1393, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 11 A期
关键词：
Chemical vapor deposition - Gallium - Ion beams - Photolithography - Polymethyl methacrylates - Positive ions - Reactive ion etching - Scanning electron microscopy - Thermal effects;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Nanoimprint lithography (NIL) Si molds with protrusion- and hollow-defects were repaired by Ga+ focused-ion-beam (FIB) direct etching and chemical-vapor-deposition (CVD). The usability of the repaired mold was confirmed by carrying out NIL on poly(methylmethacrylate) (PMMA). After the NIL process, Ga grains appeared on the etching-repaired mold, which was confirmed by scanning electron microscopy-energy dispersive spectrometry (SEM-EDS). The thresholds of ion dose and annealing temperature for Ga grain appearance are studied.
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页码：7769 / 7772
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