Analytical band simulation of electric transport in ZnS thin film electroluminescent devices

被引：0
|
作者：
Zhao, Hui [1 ]
He, Da-Wei [1 ]
Wang, Yong-Sheng [1 ]
Xu, Xu-Rong [1 ]
机构：
[1] Inst. of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2000年 / 49卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
21
引用
收藏
页码：1871 / 1872
相关论文
共 50 条
  • [41] Excitation and deexcitation of ac-driven thin-film ZnS electroluminescent devices
    1600, Publ by American Inst of Physics, Woodbury, NY, USA (72):
  • [42] Electrical characterization of white SrS/ZnS multilayer thin-film electroluminescent devices
    Neyts, K
    Meuret, Y
    Stuyven, G
    De Visschere, P
    Moehnke, S
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2906 - 2911
  • [43] Influence of charged centres on transport properties of thin film electroluminescent devices
    Zhao, H
    Wang, YS
    Xu, Z
    Xu, XR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1098 - 1101
  • [44] Monte Carlo simulation on electron intervalley transfer process in ZnS-type thin-film electroluminescent devices
    Zhao, H
    Wang, YS
    Xu, Z
    Xu, XR
    ACTA PHYSICA SINICA, 1999, 48 (03) : 533 - 538
  • [45] Monte Carlo simulation on electron intervalley transfer process in ZnS-type thin-film electroluminescent devices
    Inst. of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China
    Wuli Xuebao, 3 (537-538):
  • [46] EVIDENCE FOR BAND-TO-BAND IMPACT IONIZATION IN EVAPORATED ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES
    ANG, WM
    PENNATHUR, S
    PHAM, L
    WAGER, JF
    GOODNICK, SM
    DOUGLAS, AA
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2719 - 2724
  • [47] Materials in thin film electroluminescent devices
    Leskelä, M
    Li, WM
    Ritala, M
    ELECTROLUMINESCENCE II, 2000, 65 : 107 - 182
  • [48] Local electric field in ZnS:Mn thin film electroluminescence devices
    Li, Yunbai
    Hou, Yanbing
    Gongneng Cailiao/Journal of Functional Materials, 1997, 28 (05): : 482 - 485
  • [49] OBSERVATION AND SIMULATION OF SPACE-CHARGE EFFECTS AND HYSTERESIS IN ZNS-MN AC THIN-FILM ELECTROLUMINESCENT DEVICES
    NEYTS, KA
    CORLATAN, D
    DEVISSCHERE, P
    VANDENBOSSCHE, J
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5339 - 5346
  • [50] Study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD
    Wang, C.W.
    Sheu, T.J.
    Su, Y.K.
    Yokoyama, M.
    Applied Surface Science, 1997, 113-114 : 709 - 713
12345